一種低壓低溫度系數(shù)的帶隙基準(zhǔn)電路

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摘要：本文介紹了一種工作在3.3V電壓下，適合于標(biāo)準(zhǔn)BiCMOS工藝的帶隙基準(zhǔn)電路。傳統(tǒng)的帶隙基準(zhǔn)電路是利用三極管的短接電壓VBE與熱電壓VT和kT/q乘積的和產(chǎn)生的。因此，VREF大約為1.25V，這就限制了低于1V的帶隙輸出電壓。本文介紹的帶隙基準(zhǔn)電路輸出電壓大約為695mV，并且可以很方便的減小或者增大輸出電壓。電路的輸出電壓在190°C的溫度范圍內(nèi)的變化值只有1.5mV，它的溫度系數(shù)大約只有8ppm/°C。

關(guān)鍵字：帶隙基準(zhǔn)，低壓，低溫度系數(shù)

A Low Voltage Low Temperature Coefficient Bandgap Reference
Zhang Fengjiang 1 , 2 ,Zhang Hong1 , 2 ,Zhang Zhengfan 3
(1. Chongqing University of Posts and Telecommunications, Chongqing 400065; 2. National Laboratory of Analog IC, Chongqing 400060; 3. Sichuan Institute of Solid-State Circuits, Chongqing 400060; )
Abstract： A CMOS bandgap reference(BGR) circuit which can successfully operate with 3.3V supply and is compatible with a standard BiCMOS process is described in this paper. In the conventional BGR circuit, the output voltage VREF is the sum of the built-in voltage of the diode VBE and the thermal voltage VT of kT/q multiplied by a constant. Therefore, VREF is about1.25 V, which limits a low supply-voltage operation below 1 V. The reference voltage is about 695 mV and it can simply be adjusted to higher reference voltages. And the circuit demonstrates a variation of 1.5mV over 190°C and has a temperature coefficient of 8ppm/°C.
Keywords: bandgap reference(BGR) ,low voltage , low temperature coefficient