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摘要 ……………………………………………………………………………….I
Abstract …………………………………………………………………………...II
1 引言……………………………………………………………………………...1
1.1太陽能電池發(fā)展背景………………………………………………………..1
1.2研究少子壽命的意義………………………………………………………..3
1.3晶體硅的熱處理……………………………………………………………..5
1.4晶體硅熱過程研究的國內(nèi)外現(xiàn)狀及發(fā)展趨勢……………………………..6
1.5本課題研究意義及內(nèi)容……………………………………………………..7
2 實(shí)驗(yàn)內(nèi)容………………………………………………………………………...9
2.1實(shí)驗(yàn)樣品與試劑……………………………………………………………..9
2.2實(shí)驗(yàn)儀器……………………………………………………………………10
2.3實(shí)驗(yàn)方案……………………………………………………………………14
2.4實(shí)驗(yàn)流程圖…………………………………………………………………15
2.5實(shí)驗(yàn)過程……………………………………………………………………16
3 結(jié)果與討論……………………………………………………………………..21
3.1冷卻速率對少子壽命的影響………………………………………………21
3.2冷卻速率對電阻率的影響…………………………………………………27
4 結(jié)論…………………………………………………………………………….30
參考文獻(xiàn)………………………………………………………………………….31
致謝 ……………………………………………………………………………...32




摘 要
在單晶硅太陽能電池的池制作過程中，單晶硅片要經(jīng)過磷擴(kuò)散、鋁背電極制作等幾步熱過程，這些熱過程對單晶硅片的電學(xué)性能會產(chǎn)生怎樣的影響，對能否制備高效硅晶太陽電池非常重要。本文就熱過程不同的連續(xù)冷卻速率對單晶硅少數(shù)載流子壽命和電阻率的影響進(jìn)行了研究。實(shí)驗(yàn)結(jié)果表明，單晶硅塊經(jīng)高溫加熱分別以不同冷卻速率冷卻后，其少子壽命隨冷卻速率的增加而降低，與此同時，其電阻率也隨冷卻速率的增加而降低。本文還對實(shí)驗(yàn)的結(jié)果進(jìn)行了理論分析。

關(guān)鍵詞: 單晶硅；少子壽命；電阻率；連續(xù)冷卻。


Effect of continuous cooling rate on the electrical properties of Czochralski silicon

Abstract

Czochralski (CZ) silicon is about to participate into several thermal process during the production process of CZ silicon solar battery, the cooling rate in the cool down process, however, has a considerable influence upon the electrical properties of CZ silicon. In our experiment, several cooling rates are taken into consideration to research the minority-carrier lifetime and resistivity of CZ silicon buck after cooling down. And the result of experiment shows that, after cooling down within different rates, respectively, after thermal insulation, through analyzing the minority-carrier lifetime and resistivity after the continuous cooling, minority-carrier lifetime in CZ silicon buck decreases with the increase of cool rate, and the resistivity appears in the same way.

Key words: Czochralski silicon; minority-carrier lifetime; resistivity; continuous cooling.