包括開題報(bào)告，任務(wù)書，ppt，翻譯原文和譯文


摘要…………………………………………………………………………………….I
Abstract……………………………………………………………………………..II
1 引言……..…………………………………………………………………………1
1.1 目前單晶硅在光伏產(chǎn)業(yè)中的發(fā)展現(xiàn)狀………………………………1
1.2 研究本課題所用的方法…………………………………………………2
2 實(shí)驗(yàn)方法………………………………………………………………………7
2.1 設(shè)計(jì)實(shí)驗(yàn)…………………………………………………………………7
2.2 本次電池制備所涉及電池結(jié)構(gòu)示意圖………………………………7
2.3 實(shí)驗(yàn)步驟…………………………………………………………9
3 實(shí)驗(yàn)分析……………………………………………………………………13
3.1 單晶硅太陽能電池基本特性參數(shù)……………………………………13
3.2 電池片的IV曲線測(cè)試…………………………………………………13
3.3 實(shí)驗(yàn)結(jié)果分析…………………………………………………………16
4 結(jié)論…………………………………………………………………………18
參考文獻(xiàn)…………………………………………………………………………19
致謝…………………………………………………………………………20



突變結(jié)單晶硅太陽電池的初步研究


摘 要

突變結(jié)結(jié)構(gòu)的pn結(jié)相比于緩變結(jié)結(jié)構(gòu)的pn結(jié)有利于提高器件的光電轉(zhuǎn)換效率。本課題設(shè)計(jì)了四種不同結(jié)構(gòu)單晶硅太陽能電池，以分析研究提高太陽電池轉(zhuǎn)換效率的合理器件結(jié)構(gòu)。采用等離子體增強(qiáng)化學(xué)氣相沉積（PECVD）沉積發(fā)射極所需的摻雜硅薄膜，并采用快速熱處理（RTP）的方法使得到的薄膜晶化，以獲得最優(yōu)性能的硅薄膜。對(duì)于使發(fā)射極薄膜性能的優(yōu)化研究是針對(duì)在石英襯底上沉積薄膜，并熱處理進(jìn)行的。，利用上述最優(yōu)條件制備所設(shè)計(jì)的四種結(jié)構(gòu)的單晶硅太陽電池。將制作好的四塊突變結(jié)單晶硅電池片進(jìn)行IV曲線測(cè)試并繪制出每塊電池片的IV曲線。通過曲線分析每塊電池的開路電壓、電流密度、填充因子和電池效率，并把每塊電池的分析結(jié)果進(jìn)行對(duì)比，得出了ITO/n-μc-Si/p-c-Si/Al結(jié)構(gòu)的P型突變結(jié)單晶硅太陽能電池效果最好。在鹵鎢燈光照條件下，該電池的短路電流密度（J）為11.5mA/cm2，開路電壓（VOC）為0.4V，計(jì)算得電池效率（η）為3.8%，填充因子（FF）為0.43。


關(guān)鍵字：突變結(jié)；快速熱處理；IV曲線；電池效率



The pioneering research on the abrupt junction monocrystalline silicon solar cells

Abstract

Abrupt junction structure of the p-n junction compared with graded junction structure of the p-n junction can help improve the photoelectric conversion efficiency of the device. This topic design procession of four different structure of monocrystalline silicon solar cells, analysis and study how to improve solar cell conversion efficiency. By plasma enhanced chemical vapor deposition (PECVD) technique sedimentary emitter of doped silicon thin film, and by using the method of rapid heat treatment (RTP) to make the film crystallization, in order to obtain the optimal performance of the silicon thin film. To optimize emitter film properties of the research is in view of the film deposited on quartz substrate, and the heat treatment. Designed using the optimal conditions for the preparation of the four kinds of structure of monocrystalline silicon solar cells. IV curves of the solar cells were used to characterize the properties. It is found that the properity of the cell with a structure ITO/n-μc-Si/p-c-Si/Al is the best one. The battery short-circuit current (ISC) is 0.0025 A, open circuit voltage (VOC) is 0.4 V, battery efficiency (η) is 1.9%, the fill factor (FF) is 0.43.