快速晶化法制備p型晶硅薄膜.zip
快速晶化法制備p型晶硅薄膜,包括開題報告，任務書，ppt，翻譯原文和譯文摘要iabstractii1、 引言11.1太陽能電池概述11.2多晶硅薄膜介紹11.3多晶硅薄膜的制備方法21.4本文研究內(nèi)容與目的82、 實驗方法92.1 非晶硅薄膜的制備92.2 快速熱處理（rtp）晶化非晶硅92.3分析與測試103、 結(jié)果與討論123.1 退火溫度對...
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內(nèi)容介紹
原文檔由會員 牛奶咖啡 發(fā)布
包括開題報告，任務書，ppt，翻譯原文和譯文
摘要 I
Abstract II
1、 引言 1
1.1太陽能電池概述 1
1.2多晶硅薄膜介紹 1
1.3多晶硅薄膜的制備方法 2
1.4本文研究內(nèi)容與目的 8
2、 實驗方法 9
2.1 非晶硅薄膜的制備 9
2.2 快速熱處理（RTP）晶化非晶硅 9
2.3分析與測試 10
3、 結(jié)果與討論 12
3.1 退火溫度對電阻率的影響 12
3.2退火時間對電阻率的影響 14
3.3熱處理對薄膜厚度的影響 15
4、結(jié)論 16
參考文獻 17
致 謝 20
摘要
隨著傳統(tǒng)能源的枯竭，太陽能這種新型清潔能源越來越受到人們的重視。作為太陽能電池的一種，薄膜電池以其優(yōu)越的性能從中脫穎而出。本文在如何制備高質(zhì)量多晶硅薄膜方面做了些探索性的研究，實驗通過橢偏儀，四探針電阻測試儀對快速熱處理（RTP）前后的等離子體增強化學氣相沉積（PECVD）法在石英襯底上沉積的B元素摻雜的P型薄膜的厚度和方塊電阻進行了測試分析。其中快速熱處理的方法是，在保溫溫度950℃－1150℃，保溫時間10－20s的參數(shù)范圍內(nèi)對樣品進行處理。通過對比在溫度和時間這兩個變量下熱處理后的結(jié)晶化效果，得出最優(yōu)熱處理條件。
研究結(jié)果發(fā)現(xiàn)，硅薄膜熱處理之后的電阻率遠遠小于熱處理之前的電阻率，并且它的厚度也明顯減小。同時我們還發(fā)現(xiàn)，熱處理溫度與時間對非晶硅薄膜的晶化都有很大的影響。在950℃至1150℃的范圍內(nèi)熱處理10s的情況下，隨著溫度的升高，電阻率越低，最低可達1.226×10-4Ω•m；在熱處理20s的情況下，隨著溫度的升高，電阻率先減小后增大，在1100℃時電阻率最小，其值是1.115×10-4Ω•m。當溫度相同，在1150℃以下時，熱處理時間越長，電阻率越低；溫度達到1150℃后，10s時的電阻率小于20s時的電阻率。
關(guān)鍵詞: p型多晶硅薄膜；晶化；快速熱處理；電阻率。
Solid phase crystallization of p-type silicon films by rapid thermal processing
Abstract
As a new clean energy, solar energy has got more and more attention. As a kind of solar cells, thin film stand out from all of them for it's superior performance. This thesis has done some exploratory research on high quality polycrystalline silicon thin film. The p- type amorphous silicon films were prepared by PECVD first. Then, they were annealed by rapid heat treatment. Ellipsometer and four point probe square resistance tester were used to test the thickness and resistivity of the samples before and after the annealing process. The plateau temperature and the plateau time varied in the range of 800℃-1150 ℃and 10s-20s, in order to find the optimal paremeters for the process.
The results showed that the resistivities of silicon thin films after heat treatment decreases heavily than those before the heat treatment, and the thicknesses of the silicon thin film decreased obviously, also. At the same time it is also found that the plateau temperature and time of the heat treatment has great effect on crystallization of amorphous silicon thin films. Under the condition of 10 s heat treatment, and in the range of 950 ℃ to 1150 ℃, with the increase of the temperature, the resistivity will become more and more low until reached 1.226×10-4Ω•m; when under the condition of 20 s heat treatment, with the increase of temperature, the resistivity decreases firstly and then increased, at 1100 ℃ the resistivity is lowest, the value is 1.115×10-4Ω•m . Below 1150 ℃, the shorter the time of heat treatment, the lower the resistivity . Opponently, when the temperature reached 1150 ℃, the resistivity of the sample with a plateau time 10 s is less than that of the sample with a plateau time of 20 s. .
Key words: P-type polycrystalline silicon thin film; crystallization; rapid heat treatment; resistivity.
摘要 I
Abstract II
1、 引言 1
1.1太陽能電池概述 1
1.2多晶硅薄膜介紹 1
1.3多晶硅薄膜的制備方法 2
1.4本文研究內(nèi)容與目的 8
2、 實驗方法 9
2.1 非晶硅薄膜的制備 9
2.2 快速熱處理（RTP）晶化非晶硅 9
2.3分析與測試 10
3、 結(jié)果與討論 12
3.1 退火溫度對電阻率的影響 12
3.2退火時間對電阻率的影響 14
3.3熱處理對薄膜厚度的影響 15
4、結(jié)論 16
參考文獻 17
致 謝 20
摘要
隨著傳統(tǒng)能源的枯竭，太陽能這種新型清潔能源越來越受到人們的重視。作為太陽能電池的一種，薄膜電池以其優(yōu)越的性能從中脫穎而出。本文在如何制備高質(zhì)量多晶硅薄膜方面做了些探索性的研究，實驗通過橢偏儀，四探針電阻測試儀對快速熱處理（RTP）前后的等離子體增強化學氣相沉積（PECVD）法在石英襯底上沉積的B元素摻雜的P型薄膜的厚度和方塊電阻進行了測試分析。其中快速熱處理的方法是，在保溫溫度950℃－1150℃，保溫時間10－20s的參數(shù)范圍內(nèi)對樣品進行處理。通過對比在溫度和時間這兩個變量下熱處理后的結(jié)晶化效果，得出最優(yōu)熱處理條件。
研究結(jié)果發(fā)現(xiàn)，硅薄膜熱處理之后的電阻率遠遠小于熱處理之前的電阻率，并且它的厚度也明顯減小。同時我們還發(fā)現(xiàn)，熱處理溫度與時間對非晶硅薄膜的晶化都有很大的影響。在950℃至1150℃的范圍內(nèi)熱處理10s的情況下，隨著溫度的升高，電阻率越低，最低可達1.226×10-4Ω•m；在熱處理20s的情況下，隨著溫度的升高，電阻率先減小后增大，在1100℃時電阻率最小，其值是1.115×10-4Ω•m。當溫度相同，在1150℃以下時，熱處理時間越長，電阻率越低；溫度達到1150℃后，10s時的電阻率小于20s時的電阻率。
關(guān)鍵詞: p型多晶硅薄膜；晶化；快速熱處理；電阻率。
Solid phase crystallization of p-type silicon films by rapid thermal processing
Abstract
As a new clean energy, solar energy has got more and more attention. As a kind of solar cells, thin film stand out from all of them for it's superior performance. This thesis has done some exploratory research on high quality polycrystalline silicon thin film. The p- type amorphous silicon films were prepared by PECVD first. Then, they were annealed by rapid heat treatment. Ellipsometer and four point probe square resistance tester were used to test the thickness and resistivity of the samples before and after the annealing process. The plateau temperature and the plateau time varied in the range of 800℃-1150 ℃and 10s-20s, in order to find the optimal paremeters for the process.
The results showed that the resistivities of silicon thin films after heat treatment decreases heavily than those before the heat treatment, and the thicknesses of the silicon thin film decreased obviously, also. At the same time it is also found that the plateau temperature and time of the heat treatment has great effect on crystallization of amorphous silicon thin films. Under the condition of 10 s heat treatment, and in the range of 950 ℃ to 1150 ℃, with the increase of the temperature, the resistivity will become more and more low until reached 1.226×10-4Ω•m; when under the condition of 20 s heat treatment, with the increase of temperature, the resistivity decreases firstly and then increased, at 1100 ℃ the resistivity is lowest, the value is 1.115×10-4Ω•m . Below 1150 ℃, the shorter the time of heat treatment, the lower the resistivity . Opponently, when the temperature reached 1150 ℃, the resistivity of the sample with a plateau time 10 s is less than that of the sample with a plateau time of 20 s. .
Key words: P-type polycrystalline silicon thin film; crystallization; rapid heat treatment; resistivity.
