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摘 要 3
Abstract 4
1 引言 5
1.1 光伏行業(yè)對于能源危機(jī)的意義 5
1.2國內(nèi)外的太陽電池研究及發(fā)展現(xiàn)狀 6
1.3多晶硅片的等溫?zé)崽幚硌芯恳饬x 8
1.4本課題的研究內(nèi)容 9
2 實(shí)驗(yàn)方法 10
2.1 準(zhǔn)備實(shí)驗(yàn)材料 10
2.1.1 實(shí)驗(yàn)材料 10
2.1.2 對試樣進(jìn)行前期處理 10
2.2實(shí)驗(yàn)方案 10
2.3實(shí)驗(yàn)設(shè)備 11
2.3.1激光切割機(jī) 11
2.3.2四探針電阻率測試儀 11
2.3.3少子壽命的測試儀 11
2.3.4快速熱處理爐 11
2.4測試原理 11
2.4.1電阻率的測試 11
2.4.2間隙鐵含量的測試 12
2.4.3少子壽命的測試 12
2.5實(shí)驗(yàn)操作 13
2.5.1獲取硅片 13
2.5.2硅片的預(yù)處理 13
2.5.3數(shù)據(jù)測試 13
3.1. 等溫冷卻與連續(xù)冷卻對多晶硅片少子壽命的影響 15
3.2不同等溫溫度對多晶硅片電學(xué)性能的影響 16
3.2.1不同等溫溫度對多晶硅片少子壽命的影響 16
3.2.2不同等溫溫度對多晶硅片間隙鐵含量的影響 18
3.3不同的等溫時(shí)間對多晶硅片電學(xué)性能的影響 19
3.3.1不同等溫時(shí)間對少子壽命的影響 19
3.3.2不同等溫時(shí)間對多晶硅片間隙鐵含量的影響 21
4 結(jié)論 22
參考文獻(xiàn) 23
致 謝 24

鑄造多晶硅的等溫?zé)崽幚硌芯?br>
摘 要
鑄造多晶硅在太陽電池制造加熱后的連續(xù)冷卻過程中會(huì)產(chǎn)生少子壽命熱衰減，從而降低多晶硅太陽電池的光電轉(zhuǎn)換效率。為了消除多晶硅材料在太陽電池制造中的少子壽命熱衰減，研究等溫冷卻工藝對多晶硅片的電學(xué)性能的影響尤為重要。本文研究了等溫冷卻工藝的等溫溫度、等溫時(shí)間對多晶硅電學(xué)性能和間隙鐵含量的影響。試驗(yàn)結(jié)果表明：相對于連續(xù)冷卻，等溫冷卻可降低多晶硅片少子壽命的熱衰減；多晶硅片經(jīng)900 ℃加熱后以等溫冷卻方式冷卻，經(jīng)650 oC等溫可最大限度地降低其少子壽命的熱衰減，并且等溫時(shí)間越長，少子壽命越大。

關(guān)鍵詞：鑄造多晶硅；等溫冷卻；少子壽命；間隙鐵含量

Research on isothermal heat treatment of cast multicrystalline silicon

Abstract
The continuous cooling of the thermal process in the solar cell manufacture of multicrystalline silicon lead minority-carrier lifetime thermal degradation and reduce the efficiency of cast multicrystalline silicon solar cell. In order to reduce or eliminate thermal degradation of minority carrier lifetime of cast multicrystalline silicon, it is important to study the effect of isothermal cooling on the electrical properties of cast multicrystalline silicon wafers. The effect of isothermal temperature and isothermal time in isothermal cooling process on electrical properties and interstitial iron content were studied. The results show that, compare with the continuous cooling, isothermal cooling can reduce the thermal degradation of minority carrier lifetime of cast multicrystalline silicon, the thermal degradation of minority carrier lifetime of silicon wafer after heating at 900 ℃ and isothermal cooling at 650 ℃ can be reduced at most , and the longer of isothermal time, the longer of minority carrier lifetime of wafer.

Key words：cast multicrystalline silicon；isothermal heat treatment； minority carrier lifetime；interstitial iron content