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摘 要 I
Abstract II
1 引言 1
1.1 晶體硅太陽能電池的發(fā)展現(xiàn)狀 1
1.2 晶體硅電池的基本工藝 2
1.3 多晶硅材料中的雜質(zhì)和缺陷 2
1.4 多晶硅材料的基本電學性能 3
1.4.1 少子壽命 3
1.4.2 電阻率 3
1.4.3 帶隙和本征載流子濃度 4
1.5 多晶硅太陽能電池制備過程中的熱處理過程 4
1.5.1 RTP在磷擴散作用以及磷擴散對多晶硅少子壽命分布的影響 5
1.6 研究的意義和內(nèi)容 6
2 實驗方法 6
2.1 實驗樣品與試劑 6
2.2 實驗儀器 6
2.3 實驗方案 7
2.4 實驗步驟 7
2.4.1 硅片的預處理 7
2.4.2 原始硅片參數(shù)的測定 8
2.4.3 硅片的快速熱處理及電學性能測試 8
2.4.4 硅片的少子壽命熱衰減處理 8
2.4.5 硅片的生產(chǎn)熱過程處理 9
2.4.6 熱處理后硅片的參數(shù)測試 9
3 結果與討論 9
3.1 RTP對多晶硅間隙鐵含量和電學性能的影響 9
3.1.1 RTP對多晶硅間隙鐵含量的影響 9
3.1.2 RTP對電阻率的影響 10
3.1.3 RTP對少子壽命的影響 11
3.2 RTP對多晶硅在少子壽命熱衰減間隙鐵含量及電學性能的影響.............12
3.2.1 RTP對多晶硅少子壽命熱衰減間隙鐵含量的影響 13
3.2.2 RTP對多晶硅少子壽命熱衰減電阻率的影響 14
3.2.3 RTP對多晶硅少子壽命熱衰減的影響 15
3.3 RTP對多晶硅在磷化燒結熱過程中間隙鐵含量和電學性能的影響 17
3.3.1 RTP對多晶硅在磷化燒結熱過程中間隙鐵含量的影響 17
3.3.2 RTP對多晶硅在磷化燒結熱過程中電阻率的影響 18
3.3.3 RTP對多晶硅在磷化燒結熱過程中少子壽命的影響 19
4 結論 21
參考文獻 22
致謝 24

快速熱處理對鑄造多晶硅少子壽命熱衰減的影響


摘 要
本文研究了快速熱處理對多晶硅片少子壽命熱衰減的影響。將經(jīng)過1000 oC保溫以50 oC/s快速冷卻快速熱處理的硅片與原始硅片在900 oC保溫以不同的冷卻速率冷卻至室溫，比較兩者的少子壽命與電阻率等性能；并將硅片經(jīng)歷硅晶太陽電池制作過程中磷擴散和鋁背極燒結的熱過程，比較兩者少子壽命與電阻率性能。實驗結果證明：多晶硅片進行快速熱處理后，其電阻率上升，少子壽命急劇降低，而間隙鐵含量大幅度的提高；經(jīng)快速熱處理的硅片和原始硅片經(jīng)過900 oC加熱以不同的速率冷卻后，其少子壽命隨冷卻速率增加而降低，而間隙鐵含量隨冷卻速率增加而升高，而且經(jīng)過快速熱處理的硅片的少子壽命比原始硅片的要低；磷擴散鋁背極燒結之后經(jīng)過快速熱處理的硅片少子壽命比原始硅片低，電阻率大，鐵含量更高。

關鍵詞：多晶硅片；快速熱處理；少子壽命；熱衰減




The effects of rapid thermal processing on thermal degradation of minority carrier lifetime of cast multicrystalline silicon
Abstract
The effects of rapid thermal processing on thermal degradation of minority carrier lifetime of cast multicrystalline silicon were studied. The wafers after 1000 oC heating and rapid cooling with 50 oC/s and original silicon wafers were heated at 900 oC and cooling to the room temperature with different rate, comparing both minority carrier lifetime and resistivity; and wafers through silicon solar cell production process phosphorous diffusion and aluminum back of sintering heat process, compare the two minority carrier lifetime and resistance can spontaneously. Experimental results show: polycrystalline silicon slice to fast after heat treatment, the rise of the resistivity, minority carrier lifetime is sharply reduce, iron content and clearance will be greatly improved; Silicon fast heat and the original silicon wafer after 900 oC heat at different rates after cooling, the minority carrier lifetime decreased with increasing cooling rate, iron content increases with the increase of cooling rate and clearance, and silicon minority carrier lifetime through rapid heat treatment is lower than the original silicon wafer; Phosphorus diffusion aluminium back after rapid heat treatment after sintering silicon minority carrier lifetime than the original silicon wafer is low, the resistivity, the iron content is higher.
Key words: polysilicon wafer; rapid thermal processing; minority carrier lifetime; the thermal