退火處理對(duì)al摻雜zno薄膜的結(jié)構(gòu)，光學(xué)和電學(xué)性質(zhì)的影響[外文翻譯].zip
退火處理對(duì)al摻雜zno薄膜的結(jié)構(gòu)，光學(xué)和電學(xué)性質(zhì)的影響[外文翻譯],材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文中文3065字effect of annealing treatment on the structural, optical, and electricalproperties of al-doped zno thin films退火處理對(duì)al摻雜zno薄膜的結(jié)構(gòu)，光...
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原文檔由會(huì)員 牛奶咖啡 發(fā)布
材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文
中文3065字
Effect of annealing treatment on the structural, optical, and electricalproperties of Al-doped ZnO thin films
退火處理對(duì)Al摻雜ZnO薄膜的結(jié)構(gòu)，光學(xué)和電學(xué)性質(zhì)的影響
Abstract:
Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containingAl (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, andelectrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400°C, respectively) werecharacterized using various techniques. The experimental results show that the properties of AZO thin films can be furtherimproved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances ofthe AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, re-spectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as8.06 × 10 4 cm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sput-tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
摘要：由直流（dc）和射頻（rf)磁控濺射方式制作的含有鋅目標(biāo)al（1.5%含量）的高導(dǎo)電性和透明的摻雜zno（azo)薄膜。使用不同的技術(shù)，azo薄膜的結(jié)構(gòu)，光學(xué)和電學(xué)性能在不同溫度的退火處理（300和400℃下）顯示不同的特征。實(shí)驗(yàn) 結(jié)果表明，AZO薄膜的性能可以通過(guò)退火處理進(jìn)一步提高。經(jīng)退火處理后ZnO薄膜的結(jié)晶性提高。直流與射頻（RF）磁控濺射制備的AZO薄膜在可見(jiàn)光區(qū)域的透射率分別是80%和85%。直流磁控濺射制備AZO薄膜的電阻率在經(jīng)過(guò)退火處理火可低至8.06×10-4Ω⋅cm。有人還發(fā)現(xiàn)，射頻反應(yīng)磁控濺射制備的AZO薄膜比直流磁控濺射的有更好的結(jié)構(gòu)性和光學(xué)性
中文3065字
Effect of annealing treatment on the structural, optical, and electricalproperties of Al-doped ZnO thin films
退火處理對(duì)Al摻雜ZnO薄膜的結(jié)構(gòu)，光學(xué)和電學(xué)性質(zhì)的影響
Abstract:
Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containingAl (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, andelectrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400°C, respectively) werecharacterized using various techniques. The experimental results show that the properties of AZO thin films can be furtherimproved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances ofthe AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, re-spectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as8.06 × 10 4 cm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sput-tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
摘要：由直流（dc）和射頻（rf)磁控濺射方式制作的含有鋅目標(biāo)al（1.5%含量）的高導(dǎo)電性和透明的摻雜zno（azo)薄膜。使用不同的技術(shù)，azo薄膜的結(jié)構(gòu)，光學(xué)和電學(xué)性能在不同溫度的退火處理（300和400℃下）顯示不同的特征。實(shí)驗(yàn) 結(jié)果表明，AZO薄膜的性能可以通過(guò)退火處理進(jìn)一步提高。經(jīng)退火處理后ZnO薄膜的結(jié)晶性提高。直流與射頻（RF）磁控濺射制備的AZO薄膜在可見(jiàn)光區(qū)域的透射率分別是80%和85%。直流磁控濺射制備AZO薄膜的電阻率在經(jīng)過(guò)退火處理火可低至8.06×10-4Ω⋅cm。有人還發(fā)現(xiàn)，射頻反應(yīng)磁控濺射制備的AZO薄膜比直流磁控濺射的有更好的結(jié)構(gòu)性和光學(xué)性
