在毫秒激光輻射下的硅片表面損傷形態(tài)調(diào)查 [外文翻譯].zip
在毫秒激光輻射下的硅片表面損傷形態(tài)調(diào)查 [外文翻譯],材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文surface damage morphology investigations of silicon under millisecondlaser irradiation在毫秒激光輻射下的硅片表面損傷形態(tài)調(diào)查a b s t r a c tthe surface dam...
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材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文
Surface damage morphology investigations of silicon under millisecondlaser irradiation
在毫秒激光輻射下的硅片表面損傷形態(tài)調(diào)查
a b s t r a c t
The surface damage morphologies of single crystal silicon induced by 1064 nm millisecond Nd:YAG laserare investigated. After irradiation, the damage morphologies of silicon are inspected by optical micro-scope (OM) and atomic force microscope (AFM). The plasma emission spectra of the damaged region aredetected by the spectrometer. It is shown that surface oxidation and nitridation have occurred duringthe interaction of millisecond laser with silicon. In addition, the damage morphologies induced by 2 msand 10 ns pulse width laser are compared. The damage morphology obtained by 2 ms laser is an evidentcrater. Three types of damage morphologies are formed at different laser energy densities. The circularconcentric ripples are found surrounding the rim of the crater. The spacing of the ripples is 15 ± 5 m.Two types of cracks are observed: linear crack and circular crack. The linear crack is observed in thecenter of the damaged region which propagates to the periphery of the damaged region. The circularcrack is located at the rim of the crater. The damage morphology induced by 10 ns laser is surface layerdamage. The periodic linear waves are generated due to the interference between the incident beam andthe scattered beam. The spacing of the ripples is 1.54 m which is close to the incident laser wavelength1.064 m. The linear crack is located at the center of the damaged region. Furthermore, for the samelaser energy density, the dimension of the damaged region and the crater depth induced by 2 ms laserare greater than that of 10 ns laser. It indicates that the damage mechanism under millisecond pulse laserirradiation is strongly different from the case of nanosecond pulse laser.
摘要
由一個(gè)1064納米的毫秒Nd∶YAG激光系統(tǒng)產(chǎn)生的單晶硅的表面損傷形貌正在被研究。在照射之后，硅片的破壞形態(tài)被光學(xué)顯微鏡(OM）和原子力顯微鏡(AFM)來進(jìn)行檢測。等離子體發(fā)射光譜的受損區(qū)域被光譜儀檢測。結(jié)果表明,表面氧化和氮化在毫秒激光與硅片相互作用期間已經(jīng)發(fā)生了。此外,由于2ms和10ns脈沖寬度激光產(chǎn)生的破壞形態(tài)相差無幾。由2ms激光得到的損傷形態(tài)是一個(gè)明顯的火山口。三種類型的破壞形態(tài)形成在不同激光能量密度?；鹕娇谛螤钪車吘壈l(fā)現(xiàn)了圓形的同心波。間隔的漣漪是15±5米。兩種類型的裂縫被觀察到觀察——線性裂紋和圓形裂紋。線性裂紋在中心地區(qū)的受損會(huì)傳播到周邊的受損區(qū)域可以被觀測到。圓形的裂紋位于火山口的邊緣。10 ns激光引起的損傷形貌是表層損傷。周期性的線性波生成是由于入射光之間的干涉和散落的梁。間隔的漣漪是1.54um ——這接近于接近事件的激光波長1.064um。線性裂紋位于受損地區(qū)的中心。此外,對于相同的激光能量密度，受損區(qū)域由2毫秒激光產(chǎn)生的尺寸和坑深度誘導(dǎo)比10納秒激光器產(chǎn)生的更大。它表明,在毫秒脈沖激光下?lián)p傷機(jī)理與毫微秒脈沖激光器輻照下是強(qiáng)烈的不同。
Surface damage morphology investigations of silicon under millisecondlaser irradiation
在毫秒激光輻射下的硅片表面損傷形態(tài)調(diào)查
a b s t r a c t
The surface damage morphologies of single crystal silicon induced by 1064 nm millisecond Nd:YAG laserare investigated. After irradiation, the damage morphologies of silicon are inspected by optical micro-scope (OM) and atomic force microscope (AFM). The plasma emission spectra of the damaged region aredetected by the spectrometer. It is shown that surface oxidation and nitridation have occurred duringthe interaction of millisecond laser with silicon. In addition, the damage morphologies induced by 2 msand 10 ns pulse width laser are compared. The damage morphology obtained by 2 ms laser is an evidentcrater. Three types of damage morphologies are formed at different laser energy densities. The circularconcentric ripples are found surrounding the rim of the crater. The spacing of the ripples is 15 ± 5 m.Two types of cracks are observed: linear crack and circular crack. The linear crack is observed in thecenter of the damaged region which propagates to the periphery of the damaged region. The circularcrack is located at the rim of the crater. The damage morphology induced by 10 ns laser is surface layerdamage. The periodic linear waves are generated due to the interference between the incident beam andthe scattered beam. The spacing of the ripples is 1.54 m which is close to the incident laser wavelength1.064 m. The linear crack is located at the center of the damaged region. Furthermore, for the samelaser energy density, the dimension of the damaged region and the crater depth induced by 2 ms laserare greater than that of 10 ns laser. It indicates that the damage mechanism under millisecond pulse laserirradiation is strongly different from the case of nanosecond pulse laser.
摘要
由一個(gè)1064納米的毫秒Nd∶YAG激光系統(tǒng)產(chǎn)生的單晶硅的表面損傷形貌正在被研究。在照射之后，硅片的破壞形態(tài)被光學(xué)顯微鏡(OM）和原子力顯微鏡(AFM)來進(jìn)行檢測。等離子體發(fā)射光譜的受損區(qū)域被光譜儀檢測。結(jié)果表明,表面氧化和氮化在毫秒激光與硅片相互作用期間已經(jīng)發(fā)生了。此外,由于2ms和10ns脈沖寬度激光產(chǎn)生的破壞形態(tài)相差無幾。由2ms激光得到的損傷形態(tài)是一個(gè)明顯的火山口。三種類型的破壞形態(tài)形成在不同激光能量密度?；鹕娇谛螤钪車吘壈l(fā)現(xiàn)了圓形的同心波。間隔的漣漪是15±5米。兩種類型的裂縫被觀察到觀察——線性裂紋和圓形裂紋。線性裂紋在中心地區(qū)的受損會(huì)傳播到周邊的受損區(qū)域可以被觀測到。圓形的裂紋位于火山口的邊緣。10 ns激光引起的損傷形貌是表層損傷。周期性的線性波生成是由于入射光之間的干涉和散落的梁。間隔的漣漪是1.54um ——這接近于接近事件的激光波長1.064um。線性裂紋位于受損地區(qū)的中心。此外,對于相同的激光能量密度，受損區(qū)域由2毫秒激光產(chǎn)生的尺寸和坑深度誘導(dǎo)比10納秒激光器產(chǎn)生的更大。它表明,在毫秒脈沖激光下?lián)p傷機(jī)理與毫微秒脈沖激光器輻照下是強(qiáng)烈的不同。
