共7頁 中翻英
Effect of heat treatment on carbon inmulticrystalline silicon
Effect of heat treatment on carbon in cast multicrystalline silicon (mc-Si) has been studiedby means of Fourier Transmission Infrared Spectroscopy. Carbon is found to be involved inthe formation of as-grown precipitates in mc-Si with higher oxygen content. The experimentalresults reveal that carbon is dif?cult to precipitate in mc-Si with lower oxygen or highernitrogen concentration during annealing in the temperature range from 4501C to 11501C.Carbon can enhance the nucleation of oxygen precipitates at lower temperature (o8501C).Although carbon does not affect the amount of oxygen precipitates at higher temperature(>9501C), it is suggested that carbon diffuses into oxygen precipitates by the enhancement ofsilicon self-interstitials. The experiments point out that preannealing at 7501C enhances thedecrease of substitute carbon concentration during subsequent annealing at
10501C.Dislocations and grain boundaries in mc-Si do not affect carbon thermal treatment properties.

熱處理對鑄型多晶硅（MC- Si）中的碳的影響已經(jīng)由科學(xué)家通過傅里葉傳輸紅外光譜手段研究出來了。碳被發(fā)現(xiàn)在更高的氧含量下能夠參與微晶硅中的生長析出物的形成。實(shí)驗(yàn)結(jié)果表明，碳在450℃到1150℃的退火溫度范圍內(nèi)，在較低氧氣或更高氮?dú)鉂舛认虏焕谖⒕Ч柚形龀鑫锏男纬?。碳在較的溫度（ 小于850℃ ）下可以提高氧沉淀物的形核率。雖然碳在較高的溫度（大于950℃）下不影響氧沉淀物的量，但仍建議將碳擴(kuò)散到氧沉淀物中以填充硅自身的間隙。實(shí)驗(yàn)指出，預(yù)退火溫度為750℃以及隨后的退火溫度為1050℃的條件可以促進(jìn)置換碳濃度的減少。位錯(cuò)和微晶硅的晶界不影響碳熱處理性能。