水熱法合成多孔co(oh)2薄膜在超級(jí)電容器上的應(yīng)用_外文翻譯.zip
水熱法合成多孔co(oh)2薄膜在超級(jí)電容器上的應(yīng)用_外文翻譯,翻譯文獻(xiàn)共8頁(yè) 英翻中hydrothermal synthesized porous co(oh)2 nanoflake film for supercapacitor application porous co(oh)2 film directly grown on nickel foam is prepared b...
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翻譯文獻(xiàn)共8頁(yè) 英翻中
Hydrothermal synthesized porous Co(OH)2 nanoflake film for supercapacitor application
Porous Co(OH)2 film directly grown on nickel foam is prepared by a facile hydrothermal method. The as-prepared Co(OH)2 film possesses a structure consisting of randomly porous nanoflakes with thicknesses of 20–30 nm. The capacitive behavior of the Co(OH)2 film is investigated by cyclic voltammograms and galvanostatic charge-discharge tests in 2 mol/L KOH. The porous Co(OH)2 film exhibits a high discharge capacitance of 935 F g-1 at a current density of 2 A g-1 and excellent rate capability. The specific capacitance keeps a capacitance of 589 F g-1 when the current density increases to 40 A g-1. The specific capacitance of 82.6% is maintained after 1500 cycles at 2 A g-1.
多孔的Co(OH)2是通過(guò)一種簡(jiǎn)單的的水熱法直接生長(zhǎng)在泡沫鎳上。制備好的Co(OH)2薄膜Co(OH)2樣品具有無(wú)方向性多孔納米片結(jié)構(gòu),納米片厚度為20-30nm。Co(OH)2的電容特性是通過(guò)在2 mol/L KOH電解液下的循環(huán)伏安曲線和恒流充放電測(cè)試來(lái)研究的。多孔的Co(OH)2薄膜在 2 A /g的電流密度下的放電電容為935 F /g,表現(xiàn)出很高的大電流放電能力。這種特有的電容性保持著589 F/g-1的電容當(dāng)電流密度增大到40A/g。在2 A /g下經(jīng)過(guò)1500次循環(huán)后保持著82.6%的比電容。
Hydrothermal synthesized porous Co(OH)2 nanoflake film for supercapacitor application
Porous Co(OH)2 film directly grown on nickel foam is prepared by a facile hydrothermal method. The as-prepared Co(OH)2 film possesses a structure consisting of randomly porous nanoflakes with thicknesses of 20–30 nm. The capacitive behavior of the Co(OH)2 film is investigated by cyclic voltammograms and galvanostatic charge-discharge tests in 2 mol/L KOH. The porous Co(OH)2 film exhibits a high discharge capacitance of 935 F g-1 at a current density of 2 A g-1 and excellent rate capability. The specific capacitance keeps a capacitance of 589 F g-1 when the current density increases to 40 A g-1. The specific capacitance of 82.6% is maintained after 1500 cycles at 2 A g-1.
多孔的Co(OH)2是通過(guò)一種簡(jiǎn)單的的水熱法直接生長(zhǎng)在泡沫鎳上。制備好的Co(OH)2薄膜Co(OH)2樣品具有無(wú)方向性多孔納米片結(jié)構(gòu),納米片厚度為20-30nm。Co(OH)2的電容特性是通過(guò)在2 mol/L KOH電解液下的循環(huán)伏安曲線和恒流充放電測(cè)試來(lái)研究的。多孔的Co(OH)2薄膜在 2 A /g的電流密度下的放電電容為935 F /g,表現(xiàn)出很高的大電流放電能力。這種特有的電容性保持著589 F/g-1的電容當(dāng)電流密度增大到40A/g。在2 A /g下經(jīng)過(guò)1500次循環(huán)后保持著82.6%的比電容。
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