目 錄
摘 要 1
Abstract 2
1引言 3
1.1 氧化鋅的結(jié)構(gòu)和性質(zhì) 3
1.2 氧化鋅鋁薄膜材料的應(yīng)用 3
1.3氧化鋅薄膜材料的研究背景 4
1.4 AZO薄膜的國內(nèi)外研究發(fā)展現(xiàn)狀 4
1.5 磁控濺射鍍膜的制備工藝及原理 6
1.6 本課題的研究?jī)?nèi)容 7
2實(shí)驗(yàn) 7
2.1主要的實(shí)驗(yàn)儀器和設(shè)備 7
2.2 樣品制備 8
2.3 樣品檢測(cè) 9
2.4 實(shí)驗(yàn)方案 10
3 結(jié)果和討論 11
3.1薄膜的XRD表征 13
3.2橢偏儀的模型建立和擬合結(jié)果表征 14
3.3 電學(xué)性能測(cè)試 17
3.4 AZO薄膜的光學(xué)特性（透過率） 19
4結(jié)論 20
5參考文獻(xiàn) 21
6致謝 23


鋁摻雜氧化鋅薄膜的制備及其光電學(xué)性能研究


摘要
鋁摻雜氧化鋅薄膜是一種性能優(yōu)良的透明導(dǎo)電薄膜，在生活中的應(yīng)用十分廣泛，如太陽能電池、液晶顯示器、節(jié)能視窗等方面，同時(shí)具有光電特性好，材料來源豐富，穩(wěn)定性好，成本低廉等優(yōu)點(diǎn)。氧化鋅鋁薄膜制備的方法很多，如磁控濺射、溶膠-凝膠法、電子束蒸發(fā)法、金屬有機(jī)化學(xué)氣相沉積法、脈沖激光沉積法等。其中磁控濺射法具有沉積薄膜質(zhì)量好、沉積溫度低、沉積速率快、襯底與薄膜的粘附性好、適合工業(yè)化生產(chǎn)等優(yōu)點(diǎn)。本論文主要采用磁控濺射技術(shù)在載玻片上制備了鋁摻雜氧化鋅薄膜，研究了工作氣壓和氬氧比對(duì)鋁摻雜氧化鋅薄膜結(jié)構(gòu)、電學(xué)及光學(xué)性能的影響。采用X射線衍射儀、光譜橢偏儀、四點(diǎn)探針電阻率測(cè)試儀和紫外-可見分光光度計(jì)對(duì)鋁摻雜氧化鋅薄膜的結(jié)構(gòu)、折射率、電學(xué)和光學(xué)性能進(jìn)行了測(cè)試，研究表明，所制備薄膜均為結(jié)晶結(jié)構(gòu)；隨著工作氣壓的增大，薄膜的方塊電阻先增大后減?。浑S著氬氧比的增加，薄膜的折射率先增大后減小，帶隙減小，電阻率先增大后減小，可見區(qū)的透射率增大。
關(guān)鍵詞：氧化鋅鋁；摻雜；磁控濺射；氬氧比



Al-doped ZnO thin films and their optical properties of Research
Abstract
Al-doped ZnO films, an excellent transparent conductive films, has been widely used in many fields such as solar cells, liquid crystal displays, and Energy Saving Windows, etc, because of its good electrical and optical properties, rich sources of material, good stability, and low cost. Up to now, many techniques, such as sol-gel method, sputtering, electron beam evaporation, metal organic chemical vapor deposition, pulsed laser deposition method etc., have been successfully used to prepare Al-doped ZnO thin films thin films. And the magnetron sputtering technique is widely used in industrial production because of its low deposition temperature, high deposition rate, good adhesion between the substrate and the film. Al-doped ZnO thin films were prepared by magnetron sputtering on glass substrates from Al:ZnO target in a mixed gas of oxygen and argon. And influence of the working pressure, argon oxygen ratio on the structure, optical and electrical properties of Al-doped ZnO thin films were researched. Spectroellipsometry, X-ray diffraction structure analysis, four-probe resistance and UV-Visible spectrophotometer were used to determine the structure, optical and electrical properties of Al-doped ZnO thin films. The results show that the films are all crystallized. The resistivity of the films increases firstly and then decrease with the increase of working pressure. With the Ar:O2 ratio increasing, the refractive index increases firstly and then decrease, the energy bandgap decreases, the resistivity increases firstly and then decrease, the transmittance increases in the visible wavelength.
Keywords：AZO; Doping; Magnetron sputtering; Argon-oxygen ratio