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摘要 I
Abstract II
1.引言 1
1.1對(duì)硅片表面損傷層進(jìn)行顯微觀察研究的意義 1
1.2國(guó)內(nèi)外研究歷史與現(xiàn)狀 2
1.3 本課題研究?jī)?nèi)容 8
1.4 本課題研究方案 8
2.實(shí)驗(yàn)方法 9
2.1實(shí)驗(yàn)設(shè)備及材料 9
2.2實(shí)驗(yàn)步驟 9
2.2.1硅片的選取 9
2.2.2 硅片的清洗 9
2.2.3硅樣品的表面形貌的金相顯微觀察 11
2.2.4 硅樣品表面形貌的掃描電鏡顯微觀察 12
2.2.5 比較人工機(jī)械刻劃與金剛石線鋸切割對(duì)硅片表面造成的損傷 13
3.結(jié)果與討論 15
3.1 硅片樣品表面形貌的金相顯微圖 15
3.1.1 硅樣品的金相顯微觀察圖 15
3.1.2 化學(xué)腐蝕前后硅片表面損傷層形貌的顯微觀察 16
3.1.4物理拋光前后硅片表面損傷層形貌的顯微觀察 16
3.2 硅片表面形貌的掃描電鏡觀測(cè)圖片 16
3.3人工刻劃與金剛石線鋸切割對(duì)硅片表面造成損傷的形貌對(duì)比觀察 20
3.4 表面被刻劃的硅片在掃描電子顯微鏡下觀察到的形貌 21
4.結(jié)論 29
參考文獻(xiàn) 30
致謝 31


硅片表面損傷層的顯微觀察
摘要
近年來(lái)，隨著晶體硅在半導(dǎo)體、太陽(yáng)能電池等領(lǐng)域越來(lái)越廣泛的應(yīng)用，我們對(duì)晶體硅片表面質(zhì)量和電學(xué)性能的要求也不斷提高。晶體硅是太陽(yáng)能電池的主要部件，其性能的好壞將直接影響電池的光電轉(zhuǎn)換效率。傳統(tǒng)的晶體硅片的加工工藝已經(jīng)開(kāi)始不能滿足各個(gè)領(lǐng)域?qū)w硅高性能的要求了。因此，如何深入的研究硅片表面的損傷就十分重要了。本實(shí)驗(yàn)主要是對(duì)表面具有一定損傷的硅片進(jìn)行顯微形貌觀察分析，通過(guò)金相顯微電鏡、掃描電鏡對(duì)硅片表面形貌進(jìn)行觀察。實(shí)驗(yàn)中還比較了人工刻劃與線鋸切割對(duì)硅片表面造成損傷的不同，最后在掃描電鏡下觀察被人工刻劃的硅片表面的形貌。實(shí)驗(yàn)結(jié)果表明，在經(jīng)過(guò)線鋸切割過(guò)程后，硅片表面微觀形貌呈現(xiàn)部分溝槽、斷續(xù)劃痕、凹坑等缺陷。人工刻劃對(duì)硅片表面產(chǎn)生劃痕損傷是間斷不連續(xù)的。在掃描電鏡下觀察到劃痕是由一些間斷的、較規(guī)則排列的溝壑狀損傷組成。
關(guān)鍵詞: 硅片；損傷層；金相顯微觀察；掃描電鏡；表面形貌；刻劃



Silicon wafer surface layer damage of microscopic observation
Abstract
In recent years, with crystalline silicon in fields such as semiconductors, solar cells, more and more widely used, our requirements to crystal silicon wafer surface quality and electrical performance are constantly improving.Crystalline silicon is the main components of solar cells, its performance is good or bad will directly affect the photoelectric conversion efficiency of the battery. Traditional crystalline silicon processing technology already cannot satisfy the requirement of every field of crystalline silicon high-performance. Therefore, how to study of the damage on the surface of the silicon wafer in depth are becoming more and more important. This experiment is mainly to take a microstructure morphology observation analysis with the surface of the silicon which have certain damage. Through Metallographic microscope and Scanning electron microscopy (SEM) of silicon wafer surface morphology to observate. Experiment also compared the artificial scored with wire sawing damage on the wafer surface in different. Experimental results show that, after a diamond wire saw cutting process, the wafer surface morphology showing part of the trench, intermittent scratches, pits and other defects. Artificial scored on the wafer surface scratches injury time off is not continuous. Observed in the scanning electron microscope, the silicon surface scratches by some intermittent, with regular arrangement of the gully-like damage components.

Key words：Silicon wafer ；Damage layer ；Metallographic microscopic observation
Scanning electron microscopy；Surface morphology；Score