包括開題報告，任務書，ppt，翻譯原文和譯文

摘 要 I
Abstract II
1 引言 1
1.1 光致發(fā)光材料 2
1.2 稀土發(fā)光材料的優(yōu)異性能 2
1.3 ZnO與納米ZnO的基本性質(zhì) 2
1.4 國內(nèi)外ZnO基發(fā)光材料發(fā)展狀況 4
1.5 研究內(nèi)容 6
2.實驗部分 6
2.1 試驗主要試劑及材料 6
2.2 實驗儀器 6
2.3 實驗原理和過程 7
2.3.1 研究摻雜ZnO：Sb光電材料的理論依據(jù) 7
2.3.3 實驗過程 9
2.4 測試原理和過程 9
2.4.1 掃描電子顯微鏡(SEM) 9
2.4.2 熒光光度計 9
2.4.3 光致發(fā)光譜和光致激發(fā)譜(PL&PLE) 10
3.結果和討論 12
3.1 SEM測試及相貌分析 12
3.2 光電導測試 14
4.結論 17
參考文獻 18





ZnO：Sb納米結構的光電性能研究


摘 要
用硝酸鋅為主要原料，摻雜銻，探討了用溶膠自蔓延燃燒法合成納米級ZnO：Sb光電材料的制備工藝；用掃描電子顯微鏡(SEM)對產(chǎn)物形貌進行表征，然后對合成產(chǎn)物的光電導性質(zhì)進行深入的研究。結果表明：退火溫度為600 oC左右的條件下，在條帶狀的結構的ZnO: Sb表面生長出直徑約為30 nm的納米棒，摻雜元素Sb均已進入到ZnO晶格中，形成了六角纖鋅礦結構且具有高度的C軸擇優(yōu)取向。光電導測試中，產(chǎn)生最大光電流的峰值波長大約為355 nm，且光強不同響應也不同。發(fā)生光電效應時，在入射光頻率一定的條件下，飽和光電流與入射光強成正比。 當光照突然中止時，產(chǎn)生的光載流子需要一段時間消失，光載流子消失所需要的時間為弛豫時間。光強增大，相當于光子數(shù)量增大，產(chǎn)生的光電子數(shù)量跟著增大。

關鍵詞：氧化鋅納米結構；光電導；銻摻雜



Research on Photoelectric Properties of Sb-doped ZnO Nanostrutures

Abstract

Using Zn(NO3)2 as precursor and Sb as dopants, the preparation technology of nanostructure ZnO : Sb photovoltaic materials using Sol-gel Auto-combustion process has been discussed. It was indicated that the striped nanometer ZnO : Sb nanorods can be synthesized when annealed at 600 oC, whose particle diameter is about 30 nm, and peak wavelength generating maximum photocurrent is about 355 nm, doping elements Sb has entered into the ZnO lattice , forming a hexagonal structure with a high level of C-axis orientation. In the course of photoconductive test , different intensity have different responses. When photoelectric effect occurs, if the frequency of light keeps constant, the saturation current is proportional to the light intensity.When the light is aborted suddenly , photo-carriers take some time to disappear , the lasting time is relaxation time.The greater light intensity ,the greater photocurrent. The response speed of photocurrent maintain the same even though the light intensity is various.


Key words: ZnO nanostructures; photoconductivity; Sb doping.