材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文

Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

通過硅摻雜提高InAs和GaAs量子點(diǎn)電池的光電轉(zhuǎn)換效率

a b s t r a c t
This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells bydirectly doping Si into InAs QDs during the QD growth. The devices which contain five stacked QDs intheir i-regions were grown using molecular beam epitaxy. It is shown that using appropriate Si-doing,the open-circuit voltage of the device can be increased to 0.84 V. This is dramatically higher than theva lue of 0.67 V obtained in undoped device using the same structure. Moreover, the efficiency ofcorresponding device is improved from 11.3% to 17.0%. This improvement in efficiency is attributed togreatly reduced energy loss in the devices that results from the reduction of the defect density in thestacked InAs/GaAs QD layers due to the doping.

本文主要探討在電砷化鎵量子點(diǎn)太陽(yáng)能電池池中量子點(diǎn)增長(zhǎng)的過程中直接摻雜硅量子點(diǎn)來顯著提高工作效率的重要意義。這個(gè)設(shè)備包含五個(gè)堆疊在i地區(qū)的量子點(diǎn)是用分子束外延生長(zhǎng)。它顯示出使用適當(dāng)?shù)墓枳龅拈_路電壓的設(shè)備可以提高到0.84 V.這是顯著高于未摻雜的移動(dòng)設(shè)備使用相同的結(jié)構(gòu)中得到的值的0.67 V。此外，相應(yīng)的移動(dòng)設(shè)備的效率從11.3％提高至17.0％。這種效率的改進(jìn)是由于大大降低能量損失的設(shè)備中的缺陷密度減少的結(jié)果，由于摻雜在堆疊的砷化銦/砷化鎵量子點(diǎn)層中摻雜了硅的原因。