材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文

Crystallized Si films by lowtemperature rapid thermal annealing ofamorphous silicon

低溫快速熱處理制備多晶硅

Low~temperature rapid thermal annealing has been used to crystallize both undoped anddoped amorphous silicon (a-SO films deposited at low temperatures. The poiycrystalline filmsproduced are completely crystallized with time~temperature budgets such as 4 min at 700°C.Unlike deposited polycrystalline Si films, the grain size in these crystallized films is not limitedby film thickness. In the case of undoped a-Si films crystallized by this approach, the resultingconductivity is comparable to that achieved in undoped polycrystaUine Si films produced bymuch higher processing temperatures. In the case of doped a-Si films, the resulting crystaHizedfilm yields a conductivity of 160 S/cm, a value which is comparable to the highest reported fordoped polycrystalline and microcrystalline silicon. These doped films are found to havemobility values of ~ 13 cm2IV s.

低溫快速熱處理技術(shù)在低溫時(shí)結(jié)晶摻雜和非摻雜非晶硅的過(guò)程已經(jīng)得到運(yùn)用。不同于一般沉積多晶硅薄膜的技術(shù)，這些薄膜的晶粒尺寸并不受薄膜厚度的限制， 它的生長(zhǎng)完全的取決于結(jié)晶時(shí)間和溫度，如，4分鐘700℃。就這種無(wú)參雜的非晶硅的而言，通過(guò)這種技術(shù)，其結(jié)果與在高溫下沉積無(wú)參雜多晶硅的電導(dǎo)率相同。至于參雜的非晶硅薄膜，結(jié)晶后的電導(dǎo)率可達(dá)到 160 S/cm，比得上參雜的多晶硅和微晶硅的最高值，并且，這些結(jié)晶后的薄膜載流子遷移率可達(dá) 13 cm2 /V s。