智能單片機(jī)板基于氣體傳感器系統(tǒng)在cmos技術(shù)[外文翻譯].rar
智能單片機(jī)板基于氣體傳感器系統(tǒng)在cmos技術(shù)[外文翻譯],智能單片機(jī)板基于氣體傳感器系統(tǒng)在cmos技術(shù)[外文翻譯]a smart single-chip micro-hotplate-based gas sensor system in cmos-technology內(nèi)包含中文翻譯和英文原文，內(nèi)容完善，建議下載閱覽。①中文頁數(shù)4中文字?jǐn)?shù)3179②英文頁數(shù)8英文字?jǐn)?shù)12548③...
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原文檔由會(huì)員 鄭軍 發(fā)布
智能單片機(jī)板基于氣體傳感器系統(tǒng)在CMOS技術(shù)[外文翻譯]
A Smart Single-Chip Micro-Hotplate-Based Gas Sensor System in CMOS-Technology
內(nèi)包含中文翻譯和英文原文，內(nèi)容完善，建議下載閱覽。
①中文頁數(shù)4
中文字?jǐn)?shù)3179
②英文頁數(shù)8
英文字?jǐn)?shù)12548
③ 摘要
本文提出了一種關(guān)于單片機(jī)的化學(xué)氣體傳感器系統(tǒng)，其制造工藝CMOS技術(shù)結(jié)合了CMOS微處理技術(shù)。該系統(tǒng)包括金屬氧化物覆蓋（二氧化錫）微型熱板、必要的驅(qū)動(dòng)器及信號調(diào)節(jié)電路。二氧化錫層的敏感操作溫度在200--350 ◦C之間，在芯片上的溫度控制器調(diào)節(jié)溫度膜高達(dá)350 ◦ C，特別帶有0.5 ◦C的加熱器設(shè)計(jì)，用來實(shí)現(xiàn)膜溫度達(dá)到350 ◦ C、供電電壓達(dá)到5伏的目的。加熱器的這種設(shè)計(jì)是為了使熱板在加熱的過程中溫度能夠均勻分布均勻受熱（最高溫度在1-2％波動(dòng)）。溫度傳感器，內(nèi)外膜是良好的熱絕緣膜，它之間的的電路面積及大部分芯片在350 ◦ C膜溫度時(shí)，芯片溫度上升的最大值6 ◦ C。對數(shù)轉(zhuǎn)換器包含了測量電阻變化時(shí)二氧化錫氣體泄漏的一系列4個(gè)數(shù)量級。一個(gè)模擬硬件描述語言（AHDL）模型膜發(fā)展使模擬系統(tǒng)完整化。氣體檢測證明，試驗(yàn)中的氣體檢測濃度有所限制，二氧化碳低于1濃度和甲烷濃度低于100 。
This paper presents a monolithic chemical gas sensor system fabricated in industrial CMOS- technology combined with post-CMOS micromachining. The system comprises metal -oxide-covered (SnO2) micro-hotplates and the necessary driving and signal-conditioning circuitry. The SnO2 sensitive layer is operated at temperatures between 200 and 350◦C. The on-chip temperature controller regulates the temperature of the membrane up to 350◦C with a resolution of 0.5◦C. A special heater-design was developed in order to achieve membrane temperatures up to 350◦C with 5 V supply voltage. The heater design also ensures a homogeneous temperature distribution over the heated area of the hotplate (1–2% maximum temperature fluctuation). Temperature sensors, on- and off-membrane (near the circuitry), show an excellent thermal isolation between the heated membrane area and the circuitry-area on the bulk chip (chip temperature rises by max 6◦C at 350◦C membrane temperature). A logarithmic converter was
included to measuring the SnO2 resistance variation upon gas exposure over a range of four orders of magnitude.An Analog Hardware Description Language (AHDL) model of the membrane was developed to enable the simulations of the complete microsystem.Gas tests evidenced a detection limit below 1ppm for carbon monoxide and below 100 ppm for methane.
④關(guān)鍵字 微型熱板/ microhotplates
A Smart Single-Chip Micro-Hotplate-Based Gas Sensor System in CMOS-Technology
內(nèi)包含中文翻譯和英文原文，內(nèi)容完善，建議下載閱覽。
①中文頁數(shù)4
中文字?jǐn)?shù)3179
②英文頁數(shù)8
英文字?jǐn)?shù)12548
③ 摘要
本文提出了一種關(guān)于單片機(jī)的化學(xué)氣體傳感器系統(tǒng)，其制造工藝CMOS技術(shù)結(jié)合了CMOS微處理技術(shù)。該系統(tǒng)包括金屬氧化物覆蓋（二氧化錫）微型熱板、必要的驅(qū)動(dòng)器及信號調(diào)節(jié)電路。二氧化錫層的敏感操作溫度在200--350 ◦C之間，在芯片上的溫度控制器調(diào)節(jié)溫度膜高達(dá)350 ◦ C，特別帶有0.5 ◦C的加熱器設(shè)計(jì)，用來實(shí)現(xiàn)膜溫度達(dá)到350 ◦ C、供電電壓達(dá)到5伏的目的。加熱器的這種設(shè)計(jì)是為了使熱板在加熱的過程中溫度能夠均勻分布均勻受熱（最高溫度在1-2％波動(dòng)）。溫度傳感器，內(nèi)外膜是良好的熱絕緣膜，它之間的的電路面積及大部分芯片在350 ◦ C膜溫度時(shí)，芯片溫度上升的最大值6 ◦ C。對數(shù)轉(zhuǎn)換器包含了測量電阻變化時(shí)二氧化錫氣體泄漏的一系列4個(gè)數(shù)量級。一個(gè)模擬硬件描述語言（AHDL）模型膜發(fā)展使模擬系統(tǒng)完整化。氣體檢測證明，試驗(yàn)中的氣體檢測濃度有所限制，二氧化碳低于1濃度和甲烷濃度低于100 。
This paper presents a monolithic chemical gas sensor system fabricated in industrial CMOS- technology combined with post-CMOS micromachining. The system comprises metal -oxide-covered (SnO2) micro-hotplates and the necessary driving and signal-conditioning circuitry. The SnO2 sensitive layer is operated at temperatures between 200 and 350◦C. The on-chip temperature controller regulates the temperature of the membrane up to 350◦C with a resolution of 0.5◦C. A special heater-design was developed in order to achieve membrane temperatures up to 350◦C with 5 V supply voltage. The heater design also ensures a homogeneous temperature distribution over the heated area of the hotplate (1–2% maximum temperature fluctuation). Temperature sensors, on- and off-membrane (near the circuitry), show an excellent thermal isolation between the heated membrane area and the circuitry-area on the bulk chip (chip temperature rises by max 6◦C at 350◦C membrane temperature). A logarithmic converter was
included to measuring the SnO2 resistance variation upon gas exposure over a range of four orders of magnitude.An Analog Hardware Description Language (AHDL) model of the membrane was developed to enable the simulations of the complete microsystem.Gas tests evidenced a detection limit below 1ppm for carbon monoxide and below 100 ppm for methane.
④關(guān)鍵字 微型熱板/ microhotplates
